|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SK3601-01 FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER N-CHANNEL SILICON POWER MOS FET MOSFET OUT VIEW Outline Drawings (mm) O}*@-OE S Fig.1 oQAE* Z}* i- MARKING *\Z|"a--e Fig.1 o}*Zi- Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters DIMENSIONS ARE IN MILLIMETERS. MARKING Trademark Note:1. Dimension shown in ( ) is reference values. j* ' P.*iQl* l'B jIZ*@ -a*" e** AE Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range 2 "a*\Z|--e *W Special specification for customer Symbol VDS VDSX *5 ID Tc=25C Ta=25C ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Tc=25C Ta=25C Tch Tstg Ratings 100 70 20 4.4 80 30 20 227 20 5 50 2.4 ** +150 -55 to +150 2 Unit V V A A A V A mJ kV/s kV/s W C C CONNECTION 11 G : : Gate G Gate OE*u} D "AZe*iL* Lot No. *bgNo. Type name 22 S1 : : Source1 S1 Source1 33 S2 : : Source2 S2 Source2 44 D : : Drain G D Drain S1 S2 OE-1/4 Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source ** Surface mounted on 1000mm , t=1.6mm FR-4 PCB(Drain pad area : 500mm ) *1 L=681H, Vcc=48V *2 Tch< 150C *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 100V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=10A VGS=10V ID=10A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=10A VGS=10V RGS=10 VCC=50V ID=20A VGS=10V L=100H Tch=25C IF=20A VGS=0V Tch=25C IF=20A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 47 12 730 190 12 12 3.8 23 8.5 22 9 6 1.10 65 0.17 Min. 100 3.0 Typ. Max. 5.0 25 250 100 62 1095 285 18 18 6 35 13 33 13.5 9 1.65 Units V V A nA m S pF 6 ns nC 20 A V ns C Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) ** channel to ambient ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) Item Min. Typ. Max. 2.5 87.0 52.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3601-01 Characteristics Allowable Power Dissipation PD=f(Tc) 5 FUJI POWER MOSFET 70 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm ,t=1.6mm FR-4 PCB 2 60 4 50 3 (Drain pad area : 500mm ) 2 40 PD [W] 30 PD [W] 0 25 50 75 100 125 150 2 20 1 10 0 0 0 25 50 75 100 125 150 Tc [C] Tc [C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=20A 300 80 Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 20V 250 60 200 10V EAV [mJ] ID [A] 150 40 8V 7.5V 100 20 50 7.0V 6.5V 6.0V VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 starting Tch [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] gfs [S] ID [A] 2 2SK3601-01 FUJI POWER MOSFET Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.18 VGS= 5.5V 6.0V 0.15 6.5V 7.0V 7.5V 8V 150 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10A,VGS=10V 125 RDS(on) [ ] 0.12 RDS(on) [ m ] 100 0.09 10V 0.06 20V 0.03 75 max. 50 typ. 25 0.00 0 10 20 30 40 50 60 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. 10 12 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=20A, Tch=25C VGS(th) [V] 4.5 VGS [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. 8 6 4 2 0 0 Vcc= 50V 10 20 30 40 Tch [C] Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 1 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 0 Ciss 10 C [nF] Coss 10 -1 IF [A] 1 2 Crss 10 -2 10 -1 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] 3 2SK3601-01 Typical Switching Characteristics vs. ID 10 3 FUJI POWER MOSFET t=f(ID):Vcc=48V, VGS=10V, RG=10 100 90 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB tf 10 2 Rth(ch-a) [C/W] 80 70 60 50 40 30 t [ns] td(off) td(on) 10 1 tr 20 10 10 0 0 -1 10 10 0 10 1 10 2 0 1000 2000 3000 2 4000 5000 ID [A] Drain Pad Area [mm ] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=48V 10 2 Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
Price & Availability of 2SK3601-01 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |